| PART |
Description |
Maker |
| CGY2013G CGY2013GC1 |
GSM 4 W power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| RF2138PCBA RF2138 |
3V GSM POWER AMPLIFIER 3V的的GSM功率放大
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| MRF18085ALSR3 MRF18085AR3 MRF18085A |
GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| MRFIC0970 |
3.2V GSM GaAs Intergrated Power Amplifier 3.2V的集成的GSM砷化镓功率放大器
|
飞思卡尔半导体(中国)有限公司
Freescale Semiconductor, Inc
|
| MRFIC1859 |
Dual Band / GSM 3.6V Integrated Power Amplifier
|
Motorola
|
| PCF5078 PCF5078T |
Power amplifier controller for GSM and PCN systems
|
NXP Semiconductors
|
| MRFIC0970 |
From old datasheet system
3.2V GSM GaAs Integrated Power Amplifier
|
Motorola
|
| RMPA1850 |
Quad Band GSM/GPRS Power Amplifier Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| TQM7M5002 |
Quad-Band GSM/EDGE Polar Power Amplifier Module
|
TriQuint Semiconductor
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
